P8_PECVD_Oxford_200
| Plasma Enhanced Vapour Deposition |
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Plasma Enhanced Chemical Vapour Deposition (PECVD)
Description:
Manufacturer: Oxford Instruments
Model:: Plasmalab 100
Specification:...
Typicla Applications: ...
Tool Contact: Naiyin
This chemical vapour deposition system features a load-lock, a very high electrode temperature (700°C) and the use of dual frequency plasma generators.
The high T-range allows for obtaining good quality dielectric films like SiNx and SiOx with reduced hydrogen incorporation while the available He gas can be used to deposit amorphous and poly-crystalline Si.
The dual frequency generator allow tuning of the mechanical/residual stress of the deposited SiNx layers between tensile and compressive strain and, alternatively, to choose stress-free layers.
The available gases are: SiH4, NH3, N2, N2O and He. The system is meant for depositing SiOx @ ~55nm/min, SiNx @ 15nm/min, α-Si at 300°C and poly-Si at 500-600°C @ 4-6nm/min.
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Description:
Make | Model:
Specification:
Typicla Applications: ...
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